|
Used for metal capacitive sensors
P3051T for Diffused silicon pressure sensor
SPECIFICATIONS
Power supply: 10-30VDC
Profibus-PA Communication protocol,include AI,AO,TOT,etc
Operating temperature:
-20°C ~ +70°C(with LCD)
-40°C ~ +85°C(without LCD)
Resolution: 0.001%FS
Dimension: diameter Φ= 61mm
Mounting hole pitch D＝55mm
FEATURES
Ø High-voltage isolation： As high as 1000V for the isolation voltage between metal capacitance sensor processing circuit and main circuit.
Ø Leading micro-differential pressure technology：Unique direct digital frequency synthesis (DDS) technology ensures accurate output for low pressure range (e.g. 2kpa).
Ø Large range turndown
Ø Strong capability for anti-disturbance: Leading military-grade hardware and software anti-disturbance technology, over-voltage protection, surge current, electrostatic shock and lightning protection.
Ø Multiple field adjust functions: Range, PV Unit, Damp, Zero Trim, Lower Sensor Trim and Upper Sensor Trim and Data restore.
Ø Flexible linearity and temperature compensation: The number of points for compensating temperature and pressure can be changed on demand.
Ø 360o rotation LCD display
Ø Multiple variables shown: More than one variable displayed on the LCD with backlight for dark environment.
Ø Data backup and restore
Ø Easy to install and reliable with unique design
